Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors

Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors

In this paper, we proposed a novel saddle type FinFET (S-FinFET) to effectively solve problems occurring under the capacitor node of a dynamic random-access memory (DRAM) cell and showed how its structure was superior to conventional S-FinFETs in terms of short channel effect (SCE), subthreshold slo...

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Bibliographic Details
Main Authors: Young Kwon Kim, Jin Sung Lee, Geon Kim, Taesik Park, Hui Jung Kim, Young Pyo Cho, Young June Park, Myoung Jin Lee
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Electronics
Subjects:
gate-induced drain leakage (GIDL)
drain-induced barrier lowering (DIBL)
recessed channel array transistor (RCAT)
on-current (Ion)
off-current (Ioff)
subthreshold slope (SS)
threshold voltage (VTH)
saddle FinFET (S-FinFET)
potential drop width (PDW)
shallow trench isolation (STI)
source/drain (S/D)
Online Access:http://www.mdpi.com/2079-9292/8/1/8

Internet

http://www.mdpi.com/2079-9292/8/1/8

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