Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors
In this paper, we proposed a novel saddle type FinFET (S-FinFET) to effectively solve problems occurring under the capacitor node of a dynamic random-access memory (DRAM) cell and showed how its structure was superior to conventional S-FinFETs in terms of short channel effect (SCE), subthreshold slo...
Main Authors: | Young Kwon Kim, Jin Sung Lee, Geon Kim, Taesik Park, Hui Jung Kim, Young Pyo Cho, Young June Park, Myoung Jin Lee |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-12-01
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Series: | Electronics |
Subjects: | |
Online Access: | http://www.mdpi.com/2079-9292/8/1/8 |
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