Ratio-based multi-level resistive memory cells

Abstract Ratio-based encoding has recently been proposed for single-level resistive memory cells, in which the resistance ratio of a pair of resistance-switching devices, rather than the resistance of a single device (i.e. resistance-based encoding), is used for encoding single-bit information, whic...

Full description

Bibliographic Details
Main Authors: Miguel Angel Lastras-Montaño, Osvaldo Del Pozo-Zamudio, Lev Glebsky, Meiran Zhao, Huaqiang Wu, Kwang-Ting Cheng
Format: Article
Language:English
Published: Nature Publishing Group 2021-01-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-020-80121-7