DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors
DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resistance (NDR) resulted from the observation of the hot electron real space transfer effect in InGaAs c...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1998/95230 |