Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxyg...

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Bibliographic Details
Main Authors: Chia-Hsun Hsu, Xin-Peng Geng, Wan-Yu Wu, Ming-Jie Zhao, Xiao-Ying Zhang, Pao-Hsun Huang, Shui-Yang Lien
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Molecules
Subjects:
atomic layer deposition
aluminum-doped zinc oxide
annealing
oxygen vacancy
Online Access:https://www.mdpi.com/1420-3049/25/21/5043

Internet

https://www.mdpi.com/1420-3049/25/21/5043

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