A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications
Abstract Leakage interference between memory cells is the primary obstacle for enlarging X‐point memory arrays. Metal‐filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak path current and lower power consumpt...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2019-05-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.201900024 |