Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydr...

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Bibliographic Details
Main Authors: Sandro Rao, Giovanni Pangallo, Francesco Giuseppe Della Corte
Format: Article
Language:English
Published: MDPI AG 2016-01-01
Series:Sensors
Subjects:
p-i-n diode
temperature sensors
amorphous silicon
photonic integrated circuit
Online Access:http://www.mdpi.com/1424-8220/16/1/67

Internet

http://www.mdpi.com/1424-8220/16/1/67

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