InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors

InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors

InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub> DBR were demonstrated. GaN:Si epitaxial layers with high Si-do...

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Bibliographic Details
Main Authors: Cheng-Jie Wang, Ying Ke, Guo-Yi Shiu, Yi-Yun Chen, Yung-Sen Lin, Hsiang Chen, Chia-Feng Lin
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Applied Sciences
Subjects:
InGaN
resonant-cavity light-emitting diode
distributed bragg reflector (DBR)
Online Access:https://www.mdpi.com/2076-3417/11/1/8

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https://www.mdpi.com/2076-3417/11/1/8

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