High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and significantly reduced the reverse leakage current...

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Bibliographic Details
Main Authors: Zirui Liu, Jianfeng Wang, Hong Gu, Yumin Zhang, Weifan Wang, Rui Xiong, Ke Xu
Format: Article
Language:English
Published: AIP Publishing LLC 2019-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5100251

Internet

http://dx.doi.org/10.1063/1.5100251

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