Effect of Schottky barrier height lowering on resistance degradation of Fe-doped SrTiO3 thin-film capacitor
It is generally believed that the resistance degradation behavior of bulk and thin-film oxide capacitors arises from the oxygen vacancy migration within the oxide and/or the charge injection at the oxide/electrode interface. The magnitude of the degradation in the resistance has been theoretically s...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2021-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0038873 |