Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

Two dimensional transition metal dichalcogenides (2D TMDs) offer promise as opto-electronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the perf...

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Bibliographic Details
Main Authors: Rajesh Kappera, Damien Voiry, Sibel Ebru Yalcin, Wesley Jen, Muharrem Acerce, Sol Torrel, Brittany Branch, Sidong Lei, Weibing Chen, Sina Najmaei, Jun Lou, Pulickel M. Ajayan, Gautam Gupta, Aditya D. Mohite, Manish Chhowalla
Format: Article
Language:English
Published: AIP Publishing LLC 2014-09-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4896077

Internet

http://dx.doi.org/10.1063/1.4896077

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