Raman Analysis of E<sub>2 </sub>(High) and A<sub>1 </sub>(LO) Phonon to the Stress-Free GaN Grown on Sputtered AlN/Graphene Buffer Layer

Raman Analysis of E<sub>2 </sub>(High) and A<sub>1 </sub>(LO) Phonon to the Stress-Free GaN Grown on Sputtered AlN/Graphene Buffer Layer

The realization of high-speed and high-power gallium nitride (GaN)-based devices using high-quality GaN/Aluminum nitride (AlN) materials has become a hot topic. Raman spectroscopy has proven to be very useful in analyzing the characteristics of wide band gap materials, which reveals the information...

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Bibliographic Details
Main Authors: Yu Zeng, Jing Ning, Jincheng Zhang, Yanqing Jia, Chaochao Yan, Boyu Wang, Dong Wang
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Applied Sciences
Subjects:
E<sub>2</sub> (high) phonon
A<sub>1</sub> (LO) phonon
stress-free GaN
graphene
sputtered AlN
Online Access:https://www.mdpi.com/2076-3417/10/24/8814

Internet

https://www.mdpi.com/2076-3417/10/24/8814

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