A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

Abstract A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional as...

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Bibliographic Details
Main Authors: Xiaoshi Jin, Yicheng Wang, Kailu Ma, Meile Wu, Xi Liu, Jong-Ho Lee
Format: Article
Language:English
Published: SpringerOpen 2021-06-01
Series:Nanoscale Research Letters
Subjects:
Tunnel field effect transistor
CMOS
Bidirectional switch
Subthreshold swing
Nanoscale
Online Access:https://doi.org/10.1186/s11671-021-03561-8

Internet

https://doi.org/10.1186/s11671-021-03561-8

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