Avalanche Photodetector Based on InAs/InSb Superlattice
This work demonstrates a mid-wavelength infrared InAs/InSb superlattice avalanche photodiode (APD). The superlattice APD structure was grown by molecular beam epitaxy on GaSb substrate. The device exhibits a 100 % cut-off wavelength of 4.6 µm at 150 K and 4.30 µm at 77 K. At 150 and 77 K, the device...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-12-01
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| Series: | Quantum Reports |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2624-960X/2/4/41 |