Tunable electronic properties of silicon nanowires under strain and electric bias
The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive stra...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4890674 |