Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure
Recently hybrid graphene and hexagonal boron nitride (C-BN) nanostructures receive much research interest due to the complementary electronic properties. Graphene is a zero-gap semiconductor, while hexagonal boron nitride (h-BN) is a wide gap semiconductor. Here we studied the electronic structures...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4745599 |