Effect of HF Concentration on Physical and Electronic Properties of Electrochemically Formed Nanoporous Silicon

The most common fabrication technique of porous silicon (PS) is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF) acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and avera...

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Bibliographic Details
Main Authors: Pushpendra Kumar, Peter Lemmens, Manash Ghosh, Frank Ludwig, Meinhard Schilling
Format: Article
Language:English
Published: Hindawi Limited 2009-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2009/728957