Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

A threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We...

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Bibliographic Details
Main Authors: Kazuhiko Endo, Shinji Migita, Yuki Ishikawa, Takashi Matsukawa, Shin-ichi O'uchi, Junji Tsukada, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Hitomi Yamauchi, Meishoku Masahara
Format: Article
Language:English
Published: MDPI AG 2014-05-01
Series:Journal of Low Power Electronics and Applications
Subjects:
FinFET
SOI
threshold
Online Access:http://www.mdpi.com/2079-9268/4/2/110

Internet

http://www.mdpi.com/2079-9268/4/2/110

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