Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices

This paper reports a monolithic integration of GaN high-electron-mobility transistor (HEMT) and green light-emitting diode (LED), where the circular HEMT is surrounded by a ring-shaped LED and two devices are seamlessly interconnected by the LED's n-GaN layer and the HEMT's two-dimensional...

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Bibliographic Details
Main Authors: Yuefei Cai, Yipin Gong, Jie Bai, Xiang Yu, Chenqi Zhu, Volkan Esendag, Kean Boon Lee, Tao Wang
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8449836/