Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs

Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs

A novel lattice matched double barrier Al<sub>0.72</sub>In<sub>0.16</sub>Ga<sub>0.12</sub>N/Al<sub>0.18</sub>In<sub>0.04</sub>Ga<sub>0.78</sub>N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated...

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Bibliographic Details
Main Authors: Niraj Man Shrestha, Yiming Li, Chao-Hsuan Chen, Indraneel Sanyal, Jenn-Hawn Tarng, Jen-Inn Chyi, Seiji Samukawa
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlInGaN
double barrier
gate recess
lattice matched
normally-off HEMT
mobility
Online Access:https://ieeexplore.ieee.org/document/9157998/

Internet

https://ieeexplore.ieee.org/document/9157998/

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