Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs

A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated...

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Main Authors:	Niraj Man Shrestha, Yiming Li, Chao-Hsuan Chen, Indraneel Sanyal, Jenn-Hawn Tarng, Jen-Inn Chyi, Seiji Samukawa
Format:	Article
Language:	English
Published:	IEEE 2020-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	AlInGaN double barrier gate recess lattice matched normally-off HEMT mobility
Online Access:	https://ieeexplore.ieee.org/document/9157998/

id	doaj-69335b4a197e43bb8ff456f049acdc4d
record_format	Article
spelling	doaj-69335b4a197e43bb8ff456f049acdc4d2021-03-29T18:53:20ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01887387810.1109/JEDS.2020.30142529157998Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTsNiraj Man Shrestha0Yiming Li1https://orcid.org/0000-0001-7374-0964Chao-Hsuan Chen2Indraneel Sanyal3https://orcid.org/0000-0003-3954-0365Jenn-Hawn Tarng4Jen-Inn Chyi5https://orcid.org/0000-0001-8149-832XSeiji Samukawa6https://orcid.org/0000-0003-4971-3290Institute of Communications Engineering, National Chiao Tung University, Hsinchu, TaiwanInstitute of Communications Engineering, National Chiao Tung University, Hsinchu, TaiwanInstitute of Communications Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electrical Engineering, National Central University, Zhongli, TaiwanInstitute of Communications Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electrical Engineering, National Central University, Zhongli, TaiwanDepartment of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, TaiwanA novel lattice matched double barrier Al<sub>0.72</sub>In<sub>0.16</sub>Ga<sub>0.12</sub>N/Al<sub>0.18</sub>In<sub>0.04</sub>Ga<sub>0.78</sub>N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations. Using the experimentally calibrated physical models with bearing mobility degradation by surface roughness in account, the recess gate and double barrier of the proposed device achieves a maximum drain current density (I<sub>D,max</sub>) of 1149 mA/mm and a maximum transconductance (g<sub>D,max</sub>) of 358 mS/mm with a positive threshold voltage (Vth) of 0.2 V. The small polarization charge of first barrier is responsible for positive Vth. I<sub>DS,max</sub> in the double barrier HEMT at high gate bias condition is due to injection of electrons from upper 2DEG which is almost impossible at lower gate voltage because of insufficient energy to cross the barrier. The injection of electrons is further supported by the second peak in the g<sub>m</sub> curve at low gate bias VG = 1V. The outcome of this study suggests that the proposed device will be beneficial for high-frequency and high-power electronic applications.https://ieeexplore.ieee.org/document/9157998/AlInGaNdouble barriergate recesslattice matchednormally-off HEMTmobility
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Niraj Man Shrestha Yiming Li Chao-Hsuan Chen Indraneel Sanyal Jenn-Hawn Tarng Jen-Inn Chyi Seiji Samukawa
spellingShingle	Niraj Man Shrestha Yiming Li Chao-Hsuan Chen Indraneel Sanyal Jenn-Hawn Tarng Jen-Inn Chyi Seiji Samukawa Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs IEEE Journal of the Electron Devices Society AlInGaN double barrier gate recess lattice matched normally-off HEMT mobility
author_facet	Niraj Man Shrestha Yiming Li Chao-Hsuan Chen Indraneel Sanyal Jenn-Hawn Tarng Jen-Inn Chyi Seiji Samukawa
author_sort	Niraj Man Shrestha
title	Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs
title_short	Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs
title_full	Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs
title_fullStr	Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs
title_full_unstemmed	Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs
title_sort	design and simulation of high performance lattice matched double barrier normally off alingan/gan hemts
publisher	IEEE
series	IEEE Journal of the Electron Devices Society
issn	2168-6734
publishDate	2020-01-01
description	A novel lattice matched double barrier Al<sub>0.72</sub>In<sub>0.16</sub>Ga<sub>0.12</sub>N/Al<sub>0.18</sub>In<sub>0.04</sub>Ga<sub>0.78</sub>N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations. Using the experimentally calibrated physical models with bearing mobility degradation by surface roughness in account, the recess gate and double barrier of the proposed device achieves a maximum drain current density (I<sub>D,max</sub>) of 1149 mA/mm and a maximum transconductance (g<sub>D,max</sub>) of 358 mS/mm with a positive threshold voltage (Vth) of 0.2 V. The small polarization charge of first barrier is responsible for positive Vth. I<sub>DS,max</sub> in the double barrier HEMT at high gate bias condition is due to injection of electrons from upper 2DEG which is almost impossible at lower gate voltage because of insufficient energy to cross the barrier. The injection of electrons is further supported by the second peak in the g<sub>m</sub> curve at low gate bias VG = 1V. The outcome of this study suggests that the proposed device will be beneficial for high-frequency and high-power electronic applications.
topic	AlInGaN double barrier gate recess lattice matched normally-off HEMT mobility
url	https://ieeexplore.ieee.org/document/9157998/
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Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs

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