Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapp...

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Bibliographic Details
Main Authors: Sheng-Fu Yu, Sheng-Po Chang, Shoou-Jinn Chang, Ray-Ming Lin, Hsin-Hung Wu, Wen-Ching Hsu
Format: Article
Language:English
Published: Hindawi Limited 2012-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2012/346915