The Effect of RF-Plasma Power on the Growth of III-Nitride Materials
In this study, n-InGaN nanorods were grown directly on p-type Si (111) substrates by plasma- assisted molecular beam epitaxy (PA-MBE). The crystal structure is investigated using the reflection of high-energy electron diffraction patterns. Additionally, the morphology and optical properties of the I...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Ishik University
2019-01-01
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| Series: | Eurasian Journal of Science and Engineering |
| Subjects: | |
| Online Access: | http://eajse.org/wp-content/uploads/2019/01/The-Effect-of-RF-Plasma-Power-on-the-Growth.pdf |