Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization

Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization

A qualitative and quantitative study was performed on the carbonization temperature (TC) and carbonization time (tC) with respect to the microstructure and growth rate (Rg) of a 3C-SiC epitaxial layer on Si (111) substrates by carbonization via laser chemical vapor deposition (LCVD). The results sho...

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Bibliographic Details
Main Authors: Rong Tu, Zhiying Hu, Qingfang Xu, Lin Li, Meijun Yang, Qizhong Li, Ji Shi, Haiwen Li, Song Zhang, Lianmeng Zhang, Takashi Goto, Hitoshi Ohmori, Marina Kosinova, Bikramjit Basu
Format: Article
Language:English
Published: Taylor & Francis Group 2019-07-01
Series:Journal of Asian Ceramic Societies
Subjects:
LCVD
3C-SiC
carbonization
morphology
void
Online Access:http://dx.doi.org/10.1080/21870764.2019.1631995

Internet

http://dx.doi.org/10.1080/21870764.2019.1631995

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