Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization

• Main Authors: Rong Tu, Zhiying Hu, Qingfang Xu, Lin Li, Meijun Yang, Qizhong Li, Ji Shi, Haiwen Li, Song Zhang, Lianmeng Zhang, Takashi Goto, Hitoshi Ohmori, Marina Kosinova, Bikramjit Basu
• Format: Article
• Language: English
• Published: Taylor & Francis Group 2019-07-01
• Series: Journal of Asian Ceramic Societies
• Subjects: LCVD; 3C-SiC; carbonization; morphology; void
• Online Access: http://dx.doi.org/10.1080/21870764.2019.1631995
• ISSN: 2187-0764

A qualitative and quantitative study was performed on the carbonization temperature (TC) and carbonization time (tC) with respect to the microstructure and growth rate (Rg) of a 3C-SiC epitaxial layer on Si (111) substrates by carbonization via laser chemical vapor deposition (LCVD). The results showed that the density and size of the voids depended strongly on TC. The voids were sealed, and thin films were formed continuously and uniformly after a carbonization time of 6 min at TC = 1200 °C. Rg was also dependent on TC, and increased from 0.43 to 1.35μm·h−1 with increases in TC from 1000 to 1200 °C. These deposition rates are 10 to 100 times greater than those of observed for conventional CVD methods.