Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization
A qualitative and quantitative study was performed on the carbonization temperature (TC) and carbonization time (tC) with respect to the microstructure and growth rate (Rg) of a 3C-SiC epitaxial layer on Si (111) substrates by carbonization via laser chemical vapor deposition (LCVD). The results sho...
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Taylor & Francis Group
2019-07-01
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| Series: | Journal of Asian Ceramic Societies |
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| Online Access: | http://dx.doi.org/10.1080/21870764.2019.1631995 |
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doaj-69573a14502b4f5cbd4493131f5137402021-05-02T11:51:25ZengTaylor & Francis GroupJournal of Asian Ceramic Societies2187-07642019-07-017331232010.1080/21870764.2019.16319951631995Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonizationRong Tu0Zhiying Hu1Qingfang Xu2Lin Li3Meijun Yang4Qizhong Li5Ji Shi6Haiwen Li7Song Zhang8Lianmeng Zhang9Takashi Goto10Hitoshi Ohmori11Marina Kosinova12Bikramjit Basu13Wuhan University of TechnologyWuhan University of TechnologyWuhan University of TechnologyHuazhong Agricultural University No. 1Wuhan University of TechnologyWuhan University of TechnologyWuhan University of TechnologyWuhan University of TechnologyWuhan University of TechnologyWuhan University of TechnologyWuhan University of TechnologyWuhan University of TechnologyWuhan University of TechnologyIndian Institute of ScienceA qualitative and quantitative study was performed on the carbonization temperature (TC) and carbonization time (tC) with respect to the microstructure and growth rate (Rg) of a 3C-SiC epitaxial layer on Si (111) substrates by carbonization via laser chemical vapor deposition (LCVD). The results showed that the density and size of the voids depended strongly on TC. The voids were sealed, and thin films were formed continuously and uniformly after a carbonization time of 6 min at TC = 1200 °C. Rg was also dependent on TC, and increased from 0.43 to 1.35μm·h−1 with increases in TC from 1000 to 1200 °C. These deposition rates are 10 to 100 times greater than those of observed for conventional CVD methods.http://dx.doi.org/10.1080/21870764.2019.1631995LCVD3C-SiCcarbonizationmorphologyvoid |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Rong Tu Zhiying Hu Qingfang Xu Lin Li Meijun Yang Qizhong Li Ji Shi Haiwen Li Song Zhang Lianmeng Zhang Takashi Goto Hitoshi Ohmori Marina Kosinova Bikramjit Basu |
| spellingShingle |
Rong Tu Zhiying Hu Qingfang Xu Lin Li Meijun Yang Qizhong Li Ji Shi Haiwen Li Song Zhang Lianmeng Zhang Takashi Goto Hitoshi Ohmori Marina Kosinova Bikramjit Basu Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization Journal of Asian Ceramic Societies LCVD 3C-SiC carbonization morphology void |
| author_facet |
Rong Tu Zhiying Hu Qingfang Xu Lin Li Meijun Yang Qizhong Li Ji Shi Haiwen Li Song Zhang Lianmeng Zhang Takashi Goto Hitoshi Ohmori Marina Kosinova Bikramjit Basu |
| author_sort |
Rong Tu |
| title |
Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization |
| title_short |
Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization |
| title_full |
Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization |
| title_fullStr |
Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization |
| title_full_unstemmed |
Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization |
| title_sort |
epitaxial growth of 3c-sic (111) on si via laser cvd carbonization |
| publisher |
Taylor & Francis Group |
| series |
Journal of Asian Ceramic Societies |
| issn |
2187-0764 |
| publishDate |
2019-07-01 |
| description |
A qualitative and quantitative study was performed on the carbonization temperature (TC) and carbonization time (tC) with respect to the microstructure and growth rate (Rg) of a 3C-SiC epitaxial layer on Si (111) substrates by carbonization via laser chemical vapor deposition (LCVD). The results showed that the density and size of the voids depended strongly on TC. The voids were sealed, and thin films were formed continuously and uniformly after a carbonization time of 6 min at TC = 1200 °C. Rg was also dependent on TC, and increased from 0.43 to 1.35μm·h−1 with increases in TC from 1000 to 1200 °C. These deposition rates are 10 to 100 times greater than those of observed for conventional CVD methods. |
| topic |
LCVD 3C-SiC carbonization morphology void |
| url |
http://dx.doi.org/10.1080/21870764.2019.1631995 |
| work_keys_str_mv |
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