InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
Abstract A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2017-02-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-017-1898-y |