InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band

InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band

Abstract A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors...

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Bibliographic Details
Main Authors: Hai-Zhi Song, Mukhtar Hadi, Yanzhen Zheng, Bizhou Shen, Lei Zhang, Zhilei Ren, Ruoyao Gao, Zhiming M. Wang
Format: Article
Language:English
Published: SpringerOpen 2017-02-01
Series:Nanoscale Research Letters
Subjects:
Nanocavity
Single-photon source
Quantum dot
Distributed Bragg reflector
Online Access:http://link.springer.com/article/10.1186/s11671-017-1898-y

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