Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation
As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D Multi-Subband Ensemble Monte Carlo (MS-EMC) simul...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-02-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/11/2/204 |