Structural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD

Structural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD

Amorphous Ge-rich Si1−xGex films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD). The structural evolution of the deposited films annealed at various temperatures (Ta) is investigated. Experimental results indicate tha...

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Bibliographic Details
Main Authors: Yu Wang, Meng Yang, Gang Wang, Xiaoxu Wei, Junzhuan Wang, Yun Li, Zewen Zou, Youdou Zheng, Yi Shi
Format: Article
Language:English
Published: AIP Publishing LLC 2015-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4935872

Internet

http://dx.doi.org/10.1063/1.4935872

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