Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers
In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 µm and operated up to 120 K in pulsed mode, which is the highest working temperat...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2015-04-01
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| Series: | Photonics |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2304-6732/2/2/414 |