A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the se...

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Bibliographic Details
Main Authors: Denis E. Presnov, Sergey V. Amitonov, Pavel A. Krutitskii, Valentina V. Kolybasova, Igor A. Devyatov, Vladimir A. Krupenin, Igor I. Soloviev
Format: Article
Language:English
Published: Beilstein-Institut 2013-05-01
Series:Beilstein Journal of Nanotechnology
Subjects:
charge/field sensor
field-effect transistor
nanowire
pH sensor
silicon-on-insulator
Online Access:https://doi.org/10.3762/bjnano.4.38

Internet

https://doi.org/10.3762/bjnano.4.38

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