A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the se...

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Bibliographic Details
Main Authors: Denis E. Presnov, Sergey V. Amitonov, Pavel A. Krutitskii, Valentina V. Kolybasova, Igor A. Devyatov, Vladimir A. Krupenin, Igor I. Soloviev
Format: Article
Language:English
Published: Beilstein-Institut 2013-05-01
Series:Beilstein Journal of Nanotechnology
Subjects:
charge/field sensor
field-effect transistor
nanowire
pH sensor
silicon-on-insulator
Online Access:https://doi.org/10.3762/bjnano.4.38
Description
Summary:Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode.Conclusion: The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.
ISSN:2190-4286

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