An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors
An analytical model for surface potential of asymmetric double gate Bilayer Graphene (BLG) transistors is presented on the basis of two-dimensional Poisson’s equation. To verify the accuracy of potential model, the modelling data are compared with the simulation data of FlexPDE program and a good ag...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2013-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2013/560252 |