Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode
The avalanche photodiode is a highly sensitive photon detector with wide applications in optical communication and single photon detection. ZnO is a promising wide band gap material to realize a UV avalanche photodiode (APD). However, the lack of p-type doping, the strong self-compensation effect, a...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-07-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/11/8/740 |