Effect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substrates
It was studied the effect of irradiation with high-energy (10 MeV) electrons on the optical properties of nanocrystalline carbide film system silicon / sapphire substrates in a wide range of fluences of 5·1014 to 2·1020 cm–2 and subsequent annealing in vacuum in the range of 200—1200°C. It was found...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2017-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2017/3_2017/pdf/07.pdf |