Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) to evaluate the radiation hardness involved with the Silicon Nitride...

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Bibliographic Details
Main Authors: Young Jun Yoon, Jae Sang Lee, Jae Kwon Suk, In Man Kang, Jung Hee Lee, Eun Je Lee, Dong Seok Kim
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Micromachines
Subjects:
Gallium Nitride (GaN)
proton irradiation
surface pre-treatment
Online Access:https://www.mdpi.com/2072-666X/12/8/864

Internet

https://www.mdpi.com/2072-666X/12/8/864

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