Separate determination of the photoelectric parameters of n+-p(n)-p+ silicon structure base region by noncontact method based on measurements of quantum efficiency relationships at two wavelengths
A noncontact method for determination of recombination parameters of p(n) layer local regions in n+–p(n)–p+ silicon structures is considered. The method is based on local illumination of the investigated structure with two differently absorbed light beams. The two beams simultaneously illuminate ini...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2017-09-01
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| Series: | Modern Electronic Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177917300804 |