Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications

Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications

In this paper, a 100-nm gate length InAs high electron mobility transistor (HEMT) with non-alloyed Ti/Pt/Au ohmic contacts and mesa sidewall channel etch was investigated for high-speed and low-power logic applications. The device exhibited a low subthreshold swing (SS) of 63.3 mV/decade, a drain in...

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Bibliographic Details
Main Authors: Jing-Neng Yao, Yueh-Chin Lin, Heng-Tung Hsu, Kai-Chun Yang, Hisang-Hua Hsu, Simon M. Sze, Edward Yi Chang
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
InAs
E-mode
sidewall etch
non-alloyed
Online Access:https://ieeexplore.ieee.org/document/8404134/

Internet

https://ieeexplore.ieee.org/document/8404134/

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