Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications
In this paper, a 100-nm gate length InAs high electron mobility transistor (HEMT) with non-alloyed Ti/Pt/Au ohmic contacts and mesa sidewall channel etch was investigated for high-speed and low-power logic applications. The device exhibited a low subthreshold swing (SS) of 63.3 mV/decade, a drain in...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2018-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8404134/ |