Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3<...

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Bibliographic Details
Main Authors: Vladimir P. Popov, Fedor V. Tikhonenko, Valentin A. Antonov, Ida E. Tyschenko, Andrey V. Miakonkikh, Sergey G. Simakin, Konstantin V. Rudenko
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Nanomaterials
Subjects:
SIS structures
silicon-on-ferroelectric
diode and FET characteristics
leakage mechanisms
ferroelectric hysteresis
Online Access:https://www.mdpi.com/2079-4991/11/2/291

Internet

https://www.mdpi.com/2079-4991/11/2/291

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