RF Magnetron Sputtering Deposition of TiO<sub>2</sub> Thin Films in a Small Continuous Oxygen Flow Rate
Rutile titanium oxide (TiO<sub>2</sub>) thin films require more energy to crystallize than the anatase phase of TiO<sub>2</sub>. It is a prime candidate for micro-optoelectronics and is usually obtained either by high substrate temperature, applying a substrate bias, pulsed g...
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doaj-6c305fab73b54baa835cc958c071a55d2020-11-24T21:37:18ZengMDPI AGCoatings2079-64122019-07-019744210.3390/coatings9070442coatings9070442RF Magnetron Sputtering Deposition of TiO<sub>2</sub> Thin Films in a Small Continuous Oxygen Flow RateOctavian-Gabriel Simionescu0Cosmin Romanițan1Oana Tutunaru2Valentin Ion3Octavian Buiu4Andrei Avram5National Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, Voluntari City, Ilfov County, 077190 Bucharest, RomaniaNational Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, Voluntari City, Ilfov County, 077190 Bucharest, RomaniaNational Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, Voluntari City, Ilfov County, 077190 Bucharest, RomaniaNational Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, Magurele City, Ilfov County, 077125 Bucharest, RomaniaNational Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, Voluntari City, Ilfov County, 077190 Bucharest, RomaniaNational Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, Voluntari City, Ilfov County, 077190 Bucharest, RomaniaRutile titanium oxide (TiO<sub>2</sub>) thin films require more energy to crystallize than the anatase phase of TiO<sub>2</sub>. It is a prime candidate for micro-optoelectronics and is usually obtained either by high substrate temperature, applying a substrate bias, pulsed gas flow to modify the pressure, or ex situ annealing. In the present work, we managed to obtain high enough energy at the substrate in order for the particles to form rutile TiO<sub>2</sub> at room temperature without any intentional substrate bias in a continuous gas flow. The rutile TiO<sub>2</sub> thin films were deposited by a reactive radiofrequency magnetron sputtering system from a titanium target, in an argon/oxygen gas mixture. Investigations regarding the film’s structure and morphology were performed by X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDAX), while the optical properties were investigated by means of ellipsometry.https://www.mdpi.com/2079-6412/9/7/442room temperaturemagnetron sputteringrutile TiO<sub>2</sub> |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Octavian-Gabriel Simionescu Cosmin Romanițan Oana Tutunaru Valentin Ion Octavian Buiu Andrei Avram |
spellingShingle |
Octavian-Gabriel Simionescu Cosmin Romanițan Oana Tutunaru Valentin Ion Octavian Buiu Andrei Avram RF Magnetron Sputtering Deposition of TiO<sub>2</sub> Thin Films in a Small Continuous Oxygen Flow Rate Coatings room temperature magnetron sputtering rutile TiO<sub>2</sub> |
author_facet |
Octavian-Gabriel Simionescu Cosmin Romanițan Oana Tutunaru Valentin Ion Octavian Buiu Andrei Avram |
author_sort |
Octavian-Gabriel Simionescu |
title |
RF Magnetron Sputtering Deposition of TiO<sub>2</sub> Thin Films in a Small Continuous Oxygen Flow Rate |
title_short |
RF Magnetron Sputtering Deposition of TiO<sub>2</sub> Thin Films in a Small Continuous Oxygen Flow Rate |
title_full |
RF Magnetron Sputtering Deposition of TiO<sub>2</sub> Thin Films in a Small Continuous Oxygen Flow Rate |
title_fullStr |
RF Magnetron Sputtering Deposition of TiO<sub>2</sub> Thin Films in a Small Continuous Oxygen Flow Rate |
title_full_unstemmed |
RF Magnetron Sputtering Deposition of TiO<sub>2</sub> Thin Films in a Small Continuous Oxygen Flow Rate |
title_sort |
rf magnetron sputtering deposition of tio<sub>2</sub> thin films in a small continuous oxygen flow rate |
publisher |
MDPI AG |
series |
Coatings |
issn |
2079-6412 |
publishDate |
2019-07-01 |
description |
Rutile titanium oxide (TiO<sub>2</sub>) thin films require more energy to crystallize than the anatase phase of TiO<sub>2</sub>. It is a prime candidate for micro-optoelectronics and is usually obtained either by high substrate temperature, applying a substrate bias, pulsed gas flow to modify the pressure, or ex situ annealing. In the present work, we managed to obtain high enough energy at the substrate in order for the particles to form rutile TiO<sub>2</sub> at room temperature without any intentional substrate bias in a continuous gas flow. The rutile TiO<sub>2</sub> thin films were deposited by a reactive radiofrequency magnetron sputtering system from a titanium target, in an argon/oxygen gas mixture. Investigations regarding the film’s structure and morphology were performed by X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDAX), while the optical properties were investigated by means of ellipsometry. |
topic |
room temperature magnetron sputtering rutile TiO<sub>2</sub> |
url |
https://www.mdpi.com/2079-6412/9/7/442 |
work_keys_str_mv |
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