Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties

Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties

In this paper, we first report the laser grinding method for a single-crystal silicon wafer machined by diamond sawing. 3D laser scanning confocal microscope (LSCM), X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), laser micro-Raman spectroscopy we...

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Bibliographic Details
Main Authors: Xinxin Li, Yimeng Wang, Yingchun Guan
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Micromachines
Subjects:
laser grinding
nanosecond laser
single-crystal silicon wafer
surface finishing
resistivity
Online Access:https://www.mdpi.com/2072-666X/12/3/262
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spelling doaj-6c8a922ed3424ffdb66ac3a110a261d92021-03-05T00:01:37ZengMDPI AGMicromachines2072-666X2021-03-011226226210.3390/mi12030262Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical PropertiesXinxin Li0Yimeng Wang1Yingchun Guan2School of Mechanical Engineering and Automation, Beihang University, 37 Xueyuan Road, Beijing 10083, ChinaSchool of Mechanical Engineering and Automation, Beihang University, 37 Xueyuan Road, Beijing 10083, ChinaSchool of Mechanical Engineering and Automation, Beihang University, 37 Xueyuan Road, Beijing 10083, ChinaIn this paper, we first report the laser grinding method for a single-crystal silicon wafer machined by diamond sawing. 3D laser scanning confocal microscope (LSCM), X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), laser micro-Raman spectroscopy were utilized to characterize the surface quality of laser-grinded Si. Results show that SiO<sub>2</sub> layer derived from mechanical machining process has been efficiently removed after laser grinding. Surface roughness Ra has been reduced from original 400 nm to 75 nm. No obvious damages such as micro-cracks or micro-holes have been observed at the laser-grinded surface. In addition, laser grinding causes little effect on the resistivity of single-crystal silicon wafer. The insights obtained in this study provide a facile method for laser grinding silicon wafer to realize highly efficient grinding on demand.https://www.mdpi.com/2072-666X/12/3/262laser grindingnanosecond lasersingle-crystal silicon wafersurface finishingresistivity
collection DOAJ
language English
format Article
sources DOAJ
author Xinxin Li
Yimeng Wang
Yingchun Guan
spellingShingle Xinxin Li
Yimeng Wang
Yingchun Guan
Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties
Micromachines
laser grinding
nanosecond laser
single-crystal silicon wafer
surface finishing
resistivity
author_facet Xinxin Li
Yimeng Wang
Yingchun Guan
author_sort Xinxin Li
title Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties
title_short Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties
title_full Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties
title_fullStr Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties
title_full_unstemmed Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties
title_sort laser grinding of single-crystal silicon wafer for surface finishing and electrical properties
publisher MDPI AG
series Micromachines
issn 2072-666X
publishDate 2021-03-01
description In this paper, we first report the laser grinding method for a single-crystal silicon wafer machined by diamond sawing. 3D laser scanning confocal microscope (LSCM), X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), laser micro-Raman spectroscopy were utilized to characterize the surface quality of laser-grinded Si. Results show that SiO<sub>2</sub> layer derived from mechanical machining process has been efficiently removed after laser grinding. Surface roughness Ra has been reduced from original 400 nm to 75 nm. No obvious damages such as micro-cracks or micro-holes have been observed at the laser-grinded surface. In addition, laser grinding causes little effect on the resistivity of single-crystal silicon wafer. The insights obtained in this study provide a facile method for laser grinding silicon wafer to realize highly efficient grinding on demand.
topic laser grinding
nanosecond laser
single-crystal silicon wafer
surface finishing
resistivity
url https://www.mdpi.com/2072-666X/12/3/262
work_keys_str_mv AT xinxinli lasergrindingofsinglecrystalsiliconwaferforsurfacefinishingandelectricalproperties
AT yimengwang lasergrindingofsinglecrystalsiliconwaferforsurfacefinishingandelectricalproperties
AT yingchunguan lasergrindingofsinglecrystalsiliconwaferforsurfacefinishingandelectricalproperties
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