Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications
The electrical characteristics of In0.53Ga0.47As MOSFET grown with Si interface passivation layer (IPL) and high k gate oxide HfO2 layer have been investigated in detail. The influences of Si IPL thickness, gate oxide HfO2 thickness, the doping depth, and concentration of source and drain layer on o...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/423791 |