Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3
The fabrication of a single-crystal hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with HfSiON/Al2O3 bilayer dielectric has been carried out. HfSiON and Al2O3 layers were deposited by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques. The...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0002120 |