Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method
Creating voids between thin films is a very effective method to improve thin film crystal quality. However, for AlN material systems, the AlN layer growth, including voids, is challenging because of the very high Al atom sticking coefficient. In this study, we demonstrated an AlN template with many...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0042631 |