Effect of Oxygen Concentration Ratio on a Ga<sub>2</sub>O<sub>3</sub>-Based Resistive Random Access Memory

Effect of Oxygen Concentration Ratio on a Ga<sub>2</sub>O<sub>3</sub>-Based Resistive Random Access Memory

In this study, we have successfully prepared gallium oxide resistive random access memory by RF magnetron sputtering. The various Ar/O<sub>2</sub> gas flow was carefully controlled by different oxygen concentration to obtain proper Ga<sub>2</sub>O<sub>3</sub> film...

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Bibliographic Details
Main Authors: Chih-Chiang Yang, Jin-Quan Huang, Kuan-Yu Chen, Pei-Hsuan Chiu, Hoang-Tuan Vu, Yan-Kuin Su
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
Ga₂O₃
resistive switching
RF sputter
Online Access:https://ieeexplore.ieee.org/document/8880688/

Internet

https://ieeexplore.ieee.org/document/8880688/

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