Parasitic Memcapacitor Effects on HP TiO<sub>2</sub> Memristor Dynamics
In this paper, we study an HP TiO<sub>2</sub> memristor model with a parasitic memcapacitor, and it is shown that the parasitic element has significant effects on the volt-ampere characteristics and the dynamics of the memristor circuits. Further, the study shows that the pinched point o...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8706977/ |