Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact
The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current−voltage measurement. The Schottky diode parameters were extracted from the forward current−voltage characteristic curve by the Cheung and C...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-06-01
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| Series: | Coatings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-6412/9/6/388 |