Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ) becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM) for the next generation of non-volatile memory as it features low spin transfer switching current,...

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Bibliographic Details
Main Authors: Weisheng Zhao, Xiaoxuan Zhao, Boyu Zhang, Kaihua Cao, Lezhi Wang, Wang Kang, Qian Shi, Mengxing Wang, Yu Zhang, You Wang, Shouzhong Peng, Jacques-Olivier Klein, Lirida Alves de Barros Naviner, Dafine Ravelosona
Format: Article
Language:English
Published: MDPI AG 2016-01-01
Series:Materials
Subjects:
magnetic tunnel junction
interfacial perpendicular magnetic anisotropy
process variation
stochastic behavior
barrier breakdown
STT-MRAM
Online Access:http://www.mdpi.com/1996-1944/9/1/41

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http://www.mdpi.com/1996-1944/9/1/41

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