A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage...

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Bibliographic Details
Main Authors: Woo Young Choi, Gyuhan Yoon, Woo Young Chung, Younghoon Cho, Seongun Shin, Kwang Ho Ahn
Format: Article
Language:English
Published: MDPI AG 2019-04-01
Series:Micromachines
Subjects:
dynamic random-access memory storage capacitor
technology-computer-aided design
reliability
leakage current
time-dependent dielectric breakdown
Online Access:https://www.mdpi.com/2072-666X/10/4/256

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https://www.mdpi.com/2072-666X/10/4/256

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